FEATURES

???Internally matched to 50 ??

???Very wide frequency range (4 Ghz at 3 dB bandwidth)

???Very flat 20 dB gain (DC to 2.9 Ghz at 1 dB flatness)

???10 dBm saturated output power at 1 GHz

???High linearity (18 dBm IP3(out) at 1 GHz)

???Low current (14.6 mA)

???Unconditionally stable.

APPLICATIONS

???LNB IF amplifiers

???Cable systems

???ISM

???General purpose.

DESCRIPTION

Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package.

QUICK REFERENCE DATA

PINNING

Marking code: C2-.

Fig.1 Simplified outline (SOT363) and symbol.

APPLICATION INFORMATION

Figure 2 shows a typical application circuit for the BGM1012 MMIC. The device is internally matched to

50 ??, and therefore does not need any external matching. The value of the input and output DC blocking capacitors C2 and C3 should not be more than 100 pF for applications above 100 MHz. However, when the device is operated below 100 MHz, the capacitor value should be increased.

The nominal value of the RF choke L1 is 100 nH. At frequencies below 100 MHz this value should be increased to 220 nH. At frequencies above 1 GHz a much lower value (e.g. 10 nH) can be used to improve return losses. For optimal results, a good quality chip inductor such as the TDK MLG 1608 (0603), or a wire-wound SMD type should be chosen.

Both the RF choke L1 and the 22 nF supply decoupling capacitor C1 should be located as closely as possible to the MMIC.

Separate paths must be used for the ground planes of the ground pins GND1 and GND2, and these paths must be as short as possible. When using vias, use multiple vias per pin in order to limit ground path inductance.

Fig.2 Typical application circuit.

Figure 3 shows two cascaded MMICs. This configuration doubles overall gain while preserving broadband characteristics. Supply decoupling and grounding conditions for each MMIC are the same as those for the circuit of Fig.2.

The excellent wideband characteristics of the MMIC make it an ideal building block in IF amplifier applications such as LBNs (see Fig.4).

As a buffer amplifier between an LNA and a mixer in a receiver circuit, the MMIC offers an easy matching, low noise solution (see Fig.5).

In Fig.6 the MMIC is used as a driver to the power amplifier as part of a transmitter circuit. Good linear performance and matched input and output offer quick design solutions in such applications.

Fig.3 Easy cascading application circuit.

Fig.4 Application as IF amplifier.

Fig.5 Application as RF amplifier.

mixer

Fig.6 Application as driver amplifier.

f = 1 GHz; ZO = 50 ??.

(1)VS = 3.3 V.

(2)VS = 3 V.

(3)VS = 2.7 V.

Fig.11 Load power as a function of drive power at 1 GHz; typical values.

f = 2.2 GHz; ZO = 50 ??.

(1)VS = 3.3 V.

(2)VS = 3 V.

(3)VS = 2.7 V.

Fig.12 Load power as a function of drive power at 2.2 GHz; typical values.

06 Sep 2002

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Scattering parameters

VS = 3 V; IS = 14.6 mA; PD = ???30 dBm; ZO = 50 ??; Tamb = 25 ??C.

ampli???er wideband MMIC

BGM1012

Semiconductors Philips

speci???cation Product

DEFINITIONS

Short-form specification ??? The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values definition ??? Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information ??? Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

DISCLAIMERS

Life support applications ??? These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes ??? Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.